Unoccupied Electronic States of Ultrathin Films of Co/Cu(111) and Fe/Cu(111)

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dc.contributor.author Mankey, Gary
dc.date.accessioned 2019-07-18T19:42:56Z
dc.date.available 2019-07-18T19:42:56Z
dc.date.issued 1993-01-01
dc.identifier.citation Mankey, G., Willis, R., Himpsel, F. (1993): Unoccupied Electronic States of Ultrathin Films of Co/Cu(111) and Fe/Cu(111). Physical Review B, 47(1). DOI: https://doi.org/10.1103/PhysRevB.47.190 en_US
dc.identifier.uri http://ir.ua.edu/handle/123456789/5994
dc.description.abstract Angle-resolved inverse photoemission has been used to study changes in the unoccupied electronic states for ultrathin films of Co and Fe epitaxially deposited on Cu(111). Combining inverse photoemission and photoemission measurements of the occupied valence states reveals changes in the exchange splitting of the 3d band. The exchange splitting in a 15-Å-thick Co film is ΔEₑₓ = 1.05±0.1 eV, a value close to that measured for bulk Co(0001), ΔEₑₓ = 1.05±0.1 eV. Similar electronic structure is observed in thinner epitaxial Co films, 15 Å down to 2 Å thick, despite the fact that films cease to be continuous below 4 Å (i.e., 2 layers). The inverse photoemission spectra for the Fe/Cu(111) films show a more complicated evolution with increasing film thickness. Above 10 Å, the Fe films undergo a structural transition to the bcc(110) phase showing a 0.5-e V shift higher in energy of the uppermost minority-spin 3d band, indicative of a transition to the higher-spin-state bee phase with an exchange splitting of 1.9±0.2 e V. The lower energy of the uppermost minority-spin 3d band for the thinner films possibly indicates reduced exchange splitting in the low-spin phase of fee Fe(111). en_US
dc.format.mimetype application/pdf en_US
dc.title Unoccupied Electronic States of Ultrathin Films of Co/Cu(111) and Fe/Cu(111) en_US
dc.type text en_US


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