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Demonstration of nearly pinhole-free epitaxial aluminum thin films by sputter beam epitaxy

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dc.contributor.authorLaw, Ka Ming
dc.contributor.authorBudhathoki, Sujan
dc.contributor.authorRanjit, Smriti
dc.contributor.authorMartin, Franziska
dc.contributor.authorThind, Arashdeep S.
dc.contributor.authorMishra, Rohan
dc.contributor.authorHauser, Adam J.
dc.contributor.otherUniversity of Alabama Tuscaloosa
dc.contributor.otherWashington University (WUSTL)
dc.date.accessioned2023-09-28T20:19:45Z
dc.date.available2023-09-28T20:19:45Z
dc.date.issued2020
dc.description.abstractSuperconducting resonators with high quality factors have been fabricated from aluminum films, suggesting potential applications in quantum computing. Improvement of thin film crystal quality and removal of void and pinhole defects will improve quality factor and functional yield. Epitaxial aluminum films with superb crystallinity, high surface smoothness, and interface sharpness were successfully grown on the c-plane of sapphire using sputter beam epitaxy. This study assesses the effects of varying substrate preparation conditions and growth and prebake temperatures on crystallinity and smoothness. X-ray diffraction and reflectivity measurements yield extensive Laue oscillations and Kiessig thickness fringes for films grown at 200 degrees C under 15 mTorr Ar, indicating excellent crystallinity and surface smoothness; moreover, an additional substrate preparation procedure which involves (1) a modified substrate cleaning procedure and (2) prebake at 700 degrees C in 20 mTorr O-2 is shown by atomic force microscopy to yield nearly pinhole-free film growth while maintaining epitaxy and high crystal quality. The modified cleaning procedure is environmentally friendly and eliminates the acid etch steps common to conventional sapphire preparation, suggesting potential industrial application both on standard epitaxial and patterned surface sapphire substrates.en_US
dc.format.mediumelectronic
dc.format.mimetypeapplication/pdf
dc.identifier.citationLaw, K. M., Budhathoki, S., Ranjit, S., Martin, F., Thind, A. S., Mishra, R., & Hauser, A. J. (2020). Demonstration of nearly pinhole-free epitaxial aluminum thin films by sputter beam epitaxy. In Scientific Reports (Vol. 10, Issue 1). Springer Science and Business Media LLC. https://doi.org/10.1038/s41598-020-74981-2
dc.identifier.doi10.1038/s41598-020-74981-2
dc.identifier.orcidhttps://orcid.org/0000-0003-1261-0087
dc.identifier.urihttps://ir.ua.edu/handle/123456789/11725
dc.languageEnglish
dc.language.isoen_US
dc.publisherNature Portfolio
dc.rights.licenseAttribution 4.0 International (CC BY 4.0)
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectMultidisciplinary Sciences
dc.titleDemonstration of nearly pinhole-free epitaxial aluminum thin films by sputter beam epitaxyen_US
dc.typeArticle
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