Local charge writing in epitaxial SmNiO3 thin films

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dc.contributor.authorYan, Feng
dc.contributor.authorSchoofs, Frank
dc.contributor.authorShi, Jian
dc.contributor.authorHa, Sieu D.
dc.contributor.authorJaramillo, R.
dc.contributor.authorRamanathan, Shriram
dc.contributor.otherUniversity of Alabama Tuscaloosa
dc.date.accessioned2018-10-19T21:03:19Z
dc.date.available2018-10-19T21:03:19Z
dc.date.issued2014-02-28
dc.description.abstractWe have investigated the evolution of work function in epitaxial correlated perovskite SmNiO3 (SNO) thin film spanning the metal-insulator transition (MIT) by Kelvin probe force microscopy (KPFM). Combining contact-mode atomic force microscopy, KPFM and electrostatic force microscopy (EFM), we present charge writing processes associated with point defect engineering in the SNO thin films. Surface potential tuning in two-terminal devices is demonstrated and compared to thermal control by proximity to the phase transition boundary. The charge distribution, retention, and diffusion on SNO were systematically examined. Local compositional changes by AFM-tip induced electric fields is shown to be a viable approach to spatially engineer electronic properties of correlated oxides towards eventual applications in electronics.en_US
dc.identifier.citationYan, F., Schoofs, F., Shi, J., Ha, S., Jaramillo, R., Ramanathan, S. (2014): Local charge writing in epitaxial SmNiO3 thin films. Journal of Materials Chemistry C, 2 (19). DOI: 10.1039/C4TC00030G
dc.identifier.doi10.1039/C4TC00030G
dc.identifier.urihttp://ir.ua.edu/handle/123456789/4069
dc.subjectNickelate
dc.subjectKelvin probe force microscopy
dc.subjectMetal-insulator transition
dc.subjectcharge writing
dc.subjectmemory
dc.subjectphase change
dc.titleLocal charge writing in epitaxial SmNiO3 thin filmsen_US
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