Trimmed-diamond shaped toggle magnetoresistive random access memory cells
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Date
2009-04-08
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract
We have performed micromagnetic simulations for the design of toggle magnetoresistive random access memory (MRAM) cells to make the operating field as low as possible while keeping a reasonable margin and thermal stability. The memory cells are composed of weakly coupled synthetic antiferromagnets. The cells are diamond-shaped to suppress the formation of edge domains, which increase the operating field. The adverse effect of the diamond shape making the remanent state too stable is prevented by trimming the sharp points. The optimization of the trimming allows us to reduce the operating field and offer a pathway for realizing high-density toggle MRAM. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3104788]
Description
Keywords
Physics, Applied, Physics
Citation
Fukuma, Y., et al. (2009): Trimmed-diamond Shaped Toggle Magnetoresistive Random Access Memory Cells. Journal of Applied Physics, 105 (7). DOI: https://doi.org/10.1063/1.3104788