Influence of Capping Layers on CoFeB Anisotropy and Damping


Magnetic behavior of CoFeB at various thicknesses ranging from 2 nm to 8 nm capped with different materials, such as MgO, Ta, Ru, and V have been studied. The films were sputter-deposited and subsequently characterized by magnetometry and broadband ferromagnetic resonance (FMR). There are magnetically dead layers at the interface observed with Ru and Ta capping layers, while MgO and V have almost no effect on the magnetization of the CoFeB. As the ferromagnetic layer is made thinner, the effective magnetization decreases, indicating an interfacial perpendicular anisotropy. Particularly in the case of MgO, V/Ru, and V/Ta capping layers, interfacial perpendicular anisotropy is induced in CoFeB, and the Gilbert damping parameter is also reduced. The origin of this perpendicular magnetic anisotropy (PMA) is understood to be caused by the interface anisotropy between the free layer and the capping layer. The effect of post-deposition annealing and CoFeB thickness on the anisotropy and damping of V/Ta capped samples are reported. Doping CoFeB with vanadium (V) greatly reduced the 4pMs and 4pMeff values, resulting in an effective increase in the PMA.

Laminar flow stability, Carrier scattering, Elementary particle detectors, Amorphous state, Reaction turbines, Hole burning spectroscopy, Semiconductor device fabrication, Elementary particle decay, Amorphous solids
Natarajarathinam, A.,et al. (2012): Influence of Capping Layers on CoFeB Anisotropy and Damping, Journal of Applied Physics, 112.