Magnetic, electrical and magnetotransport properties of Cr O_2 and V O_2-based thin films and heterostructures

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dc.contributorStreet, Shane C.
dc.contributorSzulczewski, Gregory J.
dc.contributorPan, Shanlin
dc.contributorLeclair, Patrick R.
dc.contributor.advisorGupta, Arunava
dc.contributor.authorZhang, Xueyu
dc.contributor.otherUniversity of Alabama Tuscaloosa
dc.date.accessioned2017-03-01T16:57:28Z
dc.date.available2017-03-01T16:57:28Z
dc.date.issued2013
dc.descriptionElectronic Thesis or Dissertationen_US
dc.description.abstractIn this dissertation, thin films of two promising rutile oxide materials (CrO<sub>2</sub> and VO<sub>2</sub>) are studied. Additionally, magnetic tunnel junctions (MTJs) with these two materials as ferromagnetic (CrO<sub>2</sub>) and barrier layer(VO<sub>2</sub>) are fabricated and their properties are investigated. The CrO<sub>2</sub> thin films are successfully grown on TiO<sub>2</sub> (001) substrates by atmospheric pressure chemical vapor deposition (APCVD). Their structural and magnetic properties have been examined. The Stoner-Wohlfarth model is used to extract the distribution of the effective anisotropy field in the CrO<sub>2</sub> (001) films for providing a better understanding of the out-of-plane magnetic behavior. The unexpected in-plane magnetic behavior is explained by the possible existence of stripe or vortex domain structures in the films. Besides CrO<sub>2</sub>, VO<sub>2</sub> thin films and CrO<sub>2</sub>/VO<sub>2</sub> heterostructures have been grown on TiO<sub>2</sub> substrates of different orientations - (100), (110) and (001) - and their electrical and magnetic properties are studied. Finally, MTJs with CrO<sub>2</sub> as the ferromagnetic electrode, heteroepitaxial VO<sub>2</sub> as the barrier layer, and Co as the counter electrode are fabricated, and their transport and magnetic properties are investigated. The bias, temperature and barrier thickness dependence of the tunneling magnetoresistance (TMR) of these CrO<sub>2</sub>/VO<sub>2</sub>-based MTJs are presented. The Simmons and Brinkman models are used to estimate the barrier height of the tunneling device. In addition, the magnetic behavior of the MTJs at different temperatures is studied.en_US
dc.format.extent106 p.
dc.format.mediumelectronic
dc.format.mimetypeapplication/pdf
dc.identifier.otheru0015_0000001_0001489
dc.identifier.otherZHANG_alatus_0004D_11741
dc.identifier.urihttps://ir.ua.edu/handle/123456789/1951
dc.languageEnglish
dc.language.isoen_US
dc.publisherUniversity of Alabama Libraries
dc.relation.hasversionborn digital
dc.relation.ispartofThe University of Alabama Electronic Theses and Dissertations
dc.relation.ispartofThe University of Alabama Libraries Digital Collections
dc.rightsAll rights reserved by the author unless otherwise indicated.en_US
dc.subjectChemistry
dc.titleMagnetic, electrical and magnetotransport properties of Cr O_2 and V O_2-based thin films and heterostructuresen_US
dc.typethesis
dc.typetext
etdms.degree.departmentUniversity of Alabama. Department of Chemistry
etdms.degree.disciplineChemistry
etdms.degree.grantorThe University of Alabama
etdms.degree.leveldoctoral
etdms.degree.namePh.D.

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