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Atomic Layer Deposition for Surface Modifications and Solid Film Fabrication

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dc.contributorKlein, Tonya M.
dc.contributorHarris, James W.
dc.contributorHuang, Qiang
dc.contributorYan, Feng
dc.contributor.advisorPeng, Qing
dc.contributor.authorYan, Haoming
dc.contributor.otherUniversity of Alabama Tuscaloosa
dc.date.accessioned2022-02-04T20:16:56Z
dc.date.available2022-02-04T20:16:56Z
dc.date.issued2021
dc.descriptionElectronic Thesis or Dissertationen_US
dc.description.abstractAlong with the unceasing development of the surface and material science, modification of substrates surfaces in nanoscale, to fabricate the functional materials with precisely controlled dimensions, refined composition and desired properties becomes crucial. In this report, atomic layer deposition (ALD), a vapor phase, sequential and self-limiting deposition process, has been used as an alternative strategy to modify the surface of materials and fabricates nanometer or micrometer level of functional materials with precise control. In the first part of this dissertation, ALD was used to modify the surface of the shape-engineered nanocrystals (SENCs), which enhanced the thermal stability of the SENCs from 300˚C to 700˚C and enhanced the catalytic activities of the nanocrystals as well. We also proposed a new reaction mechanism of metal-organic precursor with oxide surface, in which the conventional layered ALD growth does not happen but the oxide surface was modified via controlled metal doping. In the second part of this dissertation, ALD precursors were used to reacting with liquid substrates to fabricate freestanding solid thin films. Benefits from the unique reaction mechanism of the ALD metal-organic precursors, the thickness and the compositions of the fabricated films can be controlled. The fundamental of gas-liquid reaction has been discussed in this study. In the third part of this dissertation, area-selective ALD (AS-ALD) has been reported using carboxylic acid self-assembled monolayer as a growth inhibitor. Excellent selectivity of AS-ALD has been achieved by using this method, which could potentially be used in microfabrication as a substitution step for photolithography.en_US
dc.format.mediumelectronic
dc.format.mimetypeapplication/pdf
dc.identifier.otherhttp://purl.lib.ua.edu/181768
dc.identifier.otheru0015_0000001_0004058
dc.identifier.otherYan_alatus_0004D_14645
dc.identifier.urihttp://ir.ua.edu/handle/123456789/8333
dc.languageEnglish
dc.language.isoen_US
dc.publisherUniversity of Alabama Libraries
dc.relation.hasversionborn digital
dc.relation.ispartofThe University of Alabama Electronic Theses and Dissertations
dc.relation.ispartofThe University of Alabama Libraries Digital Collections
dc.rightsAll rights reserved by the author unless otherwise indicated.en_US
dc.titleAtomic Layer Deposition for Surface Modifications and Solid Film Fabricationen_US
dc.typethesis
dc.typetext
etdms.degree.departmentUniversity of Alabama. Department of Chemical and Biological Engineering
etdms.degree.disciplineChemical engineering
etdms.degree.grantorThe University of Alabama
etdms.degree.leveldoctoral
etdms.degree.namePh.D.

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