Semiconductor nanowires: towards enhanced terahertz sources

dc.contributorKung, Patrick
dc.contributorGupta, Arunava
dc.contributorPan, Shanlin
dc.contributorYildirim, Abidin
dc.contributor.advisorKim, Seongsin
dc.contributor.authorBalci, Soner
dc.contributor.otherUniversity of Alabama Tuscaloosa
dc.date.accessioned2017-07-28T14:12:05Z
dc.date.available2017-07-28T14:12:05Z
dc.date.issued2017
dc.descriptionElectronic Thesis or Dissertationen_US
dc.description.abstractThe main objective of this work is achieving efficient electromagnetic radiation in terahertz (THz) frequency region by utilizing semiconductor nanowires due to advantages attributed to their one-dimensional structure, and also studying materials properties by adopting ultrafast THz time-domain spectroscopy (THz-TDS). In order to achieve stronger THz emission from semiconductor nanowires, we suggest a novel approach for preparing the nanowires such that we fabricate the wires from top to bottom by utilizing nanofabrication methods as opposed to growing them with bottom-up approach via conventional growth methods. Most common methods for generation and detection of THz pulses are explained along with the design of THz-TDS technique used in this research. Using THz-TDS measurement results, important materials properties can be extracted through some calculation methods which were addressed in this work. Upon analysis of these extracted properties, a material can be designated as a candidate for optoelectronic devices, photovoltaics, or even generation of THz radiation. Since it is crucial to have excellent-vertically aligned NWs with perfectly uniform distribution for enhanced THz emission, we fabricate InP and InGaAs NWs by top-down nanofabrication process that utilizes electron-beam lithography followed by reactive ion etching. Unbiased THz emission from fabricated InP and InGaAs NWs are compared, and furthermore, an interdigitated electrodes pattern is designed and fabricated along with InGaAs NWs in between the electrodes in order to investigate the enhancement of THz emission from nanowires under a DC bias field. To the best of our knowledge, this is the very first demonstration of THz emission from fabricated NWs under a bias voltage, and significant enhancement is achieved with the increasing bias voltage.en_US
dc.format.extent158 p.
dc.format.mediumelectronic
dc.format.mimetypeapplication/pdf
dc.identifier.otheru0015_0000001_0002601
dc.identifier.otherBALCI_alatus_0004D_13097
dc.identifier.urihttp://ir.ua.edu/handle/123456789/3198
dc.languageEnglish
dc.language.isoen_US
dc.publisherUniversity of Alabama Libraries
dc.relation.hasversionborn digital
dc.relation.ispartofThe University of Alabama Electronic Theses and Dissertations
dc.relation.ispartofThe University of Alabama Libraries Digital Collections
dc.rightsAll rights reserved by the author unless otherwise indicated.en_US
dc.subjectElectrical engineering
dc.subjectPhysics
dc.subjectOptics
dc.titleSemiconductor nanowires: towards enhanced terahertz sourcesen_US
dc.typethesis
dc.typetext
etdms.degree.departmentUniversity of Alabama. Department of Electrical and Computer Engineering
etdms.degree.disciplineElectrical and Computer Engineering
etdms.degree.grantorThe University of Alabama
etdms.degree.leveldoctoral
etdms.degree.namePh.D.
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