Critical Height and Growth Mode in Epitaxial Copper Nanowire Arrays Fabricated using Glancing Angle Deposition

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dc.contributor.author Mankey, Gary
dc.date.accessioned 2019-07-23T15:49:16Z
dc.date.available 2019-07-23T15:49:16Z
dc.date.issued 2005-03-18 en_US
dc.identifier.citation Alouach, H., et al. (2005): Critical Height and Growth Mode in Epitaxial Copper Nanowire Arrays Fabricated using Glancing Angle Deposition. Applied Physics Letters, 86(12). DOI: https://doi.org/10.1063/1.1891287 en_US
dc.identifier.uri http://ir.ua.edu/handle/123456789/6019
dc.description.abstract The growth and resulting crystallography of Cu nanowire arrays fabricated using glancing angle deposition are studied. On native oxide Si(100), the nanowires exhibited a strong (110) texture for a deposition angle θ= 75° with rotational symmetry of the low energy Cu[111] about the long axis. On hydrogen-terminated Si(110), the wires are epitaxial with the substrate. The critical height for epitaxial growth is maximal at θ= 35°, and decreases rapidly with increasing deposition angle. Based on the growth mechanisms in glancing-angle-deposited materials, the theory of growth mode in epitaxial thin films, and the observations about texture formation in epitaxial and nonepitaxial Cu nanowires; we discuss the observed growth modes in epitaxial nanowire arrays. en_US
dc.format.mimetype application/pdf en_US
dc.language English en_US
dc.subject Epitaxy en_US
dc.subject Crystallography en_US
dc.subject Nanowires en_US
dc.subject Chemical bonding en_US
dc.subject Oxides en_US
dc.subject Surface physics en_US
dc.subject Crystal lattices en_US
dc.subject Geometrical optics en_US
dc.subject Transition metals en_US
dc.subject Thin film deposition en_US
dc.title Critical Height and Growth Mode in Epitaxial Copper Nanowire Arrays Fabricated using Glancing Angle Deposition en_US
dc.type text en_US


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