Trimmed-diamond Shaped Toggle Magnetoresistive Random Access Memory Cells

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dc.contributor.author Mankey, Gary
dc.date.accessioned 2019-07-10T20:41:52Z
dc.date.available 2019-07-10T20:41:52Z
dc.date.issued 2009-04-08 en_US
dc.identifier.citation Fukuma, Y., et al. (2009): Trimmed-diamond Shaped Toggle Magnetoresistive Random Access Memory Cells. Journal of Applied Physics, 105 (7). DOI: https://doi.org/10.1063/1.3104788 en_US
dc.identifier.uri http://ir.ua.edu/handle/123456789/5934
dc.description.abstract We have performed micromagnetic simulations for the design of toggle magnetoresistive random access memory (MRAM) cells to make the operating field as low as possible while keeping a reasonable margin and thermal stability. The memory cells are composed of weakly coupled synthetic antiferromagnets. The cells are diamond-shaped to suppress the formation of edge domains, which increase the operating field. The adverse effect of the diamond shape making the remanent state too stable is prevented by trimming the sharp points. The optimization of the trimming allows us to reduce the operating field and offer a pathway for realizing high-density toggle MRAM. en_US
dc.format.mimetype application/pdf en_US
dc.language English en_US
dc.subject Functions and functionals en_US
dc.subject Magnetic memories en_US
dc.subject Magnetic ordering en_US
dc.subject Cells en_US
dc.subject Superconductivity en_US
dc.subject Electromagnetism en_US
dc.subject Magnetic anisotropy en_US
dc.subject Ferromagnetic materials en_US
dc.subject Interlayer exchange coupling en_US
dc.subject Thermodynamic states and processes en_US
dc.title Trimmed-diamond Shaped Toggle Magnetoresistive Random Access Memory Cells en_US
dc.type text en_US


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