Low temperature dependent ferroelectric resistive switching in epitaxial BiFeO3 films

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dc.contributor.author Yan, F.
dc.contributor.author Xing, G. Z.
dc.contributor.author Li, L.
dc.date.accessioned 2018-10-19T13:57:21Z
dc.date.available 2018-10-19T13:57:21Z
dc.date.issued 2014-04-02
dc.identifier.citation Yan, F., Xing, G., Li, L. (2014): Low temperature dependent ferroelectric resistive switching in epitaxial BiFeO3 films. Applied Physics Letters, 104 (13). DOI: 10.1063/1.4870503 en_US
dc.identifier.uri http://ir.ua.edu/handle/123456789/4053
dc.description.abstract The ferroelectric switchable diode induced resistive switching behavior at low temperature has been investigated in the epitaxial BiFeO3 (BFO) thin films. The switchable diode can be tuned using a higher voltage at low temperatures. The diode barrier is determined to be ~0.55 eV at the interface between BFO and electrode. The resistive switchable barrier with respect to the ferroelectric domain switching has been systematically characterized at various low temperatures. The temperature dependent conduction and leakage mechanisms have also been identified. These results can advance our understanding of resistive switching based on ferroelectric switchable diode at low working temperatures and potentially extend the applications of memristor to a larger temperature scale. en_US
dc.format.mimetype application/pdf en_US
dc.subject Epitaxy en_US
dc.subject Resistive switching en_US
dc.subject Ferroelectric materials en_US
dc.subject Thermal instruments en_US
dc.subject Thin films en_US
dc.subject Chemical compounds and components en_US
dc.subject Thermionic emission en_US
dc.subject Dielectric properties en_US
dc.subject Memristor en_US
dc.subject Electrical properties and parameters en_US
dc.title Low temperature dependent ferroelectric resistive switching in epitaxial BiFeO3 films en_US
dc.type text en_US


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