Influence of Capping Layers on CoFeB Anisotropy and Damping

Show simple item record Natarajarathinam, A. Tadisina, Z. R. Mewes, T. Watts, S. Chen, E. Gupta, S. 2018-08-31T16:07:52Z 2018-08-31T16:07:52Z 2012
dc.identifier.citation Natarajarathinam, A.,et al. (2012): Influence of Capping Layers on CoFeB Anisotropy and Damping, Journal of Applied Physics, 112. en_US
dc.description.abstract Magnetic behavior of CoFeB at various thicknesses ranging from 2 nm to 8 nm capped with different materials, such as MgO, Ta, Ru, and V have been studied. The films were sputter-deposited and subsequently characterized by magnetometry and broadband ferromagnetic resonance (FMR). There are magnetically dead layers at the interface observed with Ru and Ta capping layers, while MgO and V have almost no effect on the magnetization of the CoFeB. As the ferromagnetic layer is made thinner, the effective magnetization decreases, indicating an interfacial perpendicular anisotropy. Particularly in the case of MgO, V/Ru, and V/Ta capping layers, interfacial perpendicular anisotropy is induced in CoFeB, and the Gilbert damping parameter is also reduced. The origin of this perpendicular magnetic anisotropy (PMA) is understood to be caused by the interface anisotropy between the free layer and the capping layer. The effect of post-deposition annealing and CoFeB thickness on the anisotropy and damping of V/Ta capped samples are reported. Doping CoFeB with vanadium (V) greatly reduced the 4pMs and 4pMeff values, resulting in an effective increase in the PMA. en_US
dc.format.mimetype application/pdf en_US
dc.subject Laminar flow stability en_US
dc.subject Carrier scattering en_US
dc.subject Elementary particle detectors en_US
dc.subject Amorphous state en_US
dc.subject Reaction turbines en_US
dc.subject Hole burning spectroscopy en_US
dc.subject Semiconductor device fabrication en_US
dc.subject Elementary particle decay en_US
dc.subject Amorphous solids en_US
dc.title Influence of Capping Layers on CoFeB Anisotropy and Damping en_US
dc.type text en_US

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