Interfacial Perpendicular Magnetic Anisotropy and Damping Parameter in Ultra Thin Co2FeAl Films

Abstract

B2-ordered Co2FeAl films were synthesized using an ion beam deposition tool. A high degree of chemical ordering 81.2% with a low damping parameter (a) less than 0.004 was obtained in a 50 nm thick film via rapid thermal annealing at 600 C. The perpendicular magnetic anisotropy (PMA) was optimized in ultra thin Co2FeAl films annealed at 350 C without an external magnetic field. The reduced thickness and annealing temperature to achieve PMA introduced extrinsic factors thus increasing a significantly. However, the observed damping of Co2FeAl films was still lower than that of Co60Fe20B20 films prepared at the same thickness and annealing temperature.

Description
Keywords
Thin films, Carbon dioxide, Semiconductor device fabrication, Magnetic films, Ion beam assisted deposition, Anisotropy, Magnetic anisotropy, Sputter deposition, Annealing, Magnetic fields
Citation
Cui, Y., et al. (2013): Interfacial Perpendicular Magnetic Anisotropy and Damping Parameter in Ultra Thin Co2FeAl Films, Applied Physics Letters, 102(16).