On a future for silicon carbide in power electronics applications

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dc.contributor Banerjee, Sujit
dc.contributor Haskew, Tim A.
dc.contributor.advisor Lemmon, Andrew N.
dc.contributor.author Gant, Levi Jason
dc.date.accessioned 2017-03-01T17:46:00Z
dc.date.available 2017-03-01T17:46:00Z
dc.date.issued 2016
dc.identifier.other u0015_0000001_0002379
dc.identifier.other Gant_alatus_0004M_12860
dc.identifier.uri https://ir.ua.edu/handle/123456789/2696
dc.description Electronic Thesis or Dissertation
dc.description.abstract Silicon-based MOSFETs and IGBTs have long been the premiere options for semiconductor switches in power converter applications. However, each of these Si based device structures has limitations that constrain the performance capabilities of their intended applications. The recently commercialized SiC MOSFET allows for optimized application designs that are not constrained by the limitations of Si semiconductor switches as in traditional designs. This thesis will explore the device properties of SiC MOSFETs and compare them to the properties of Si MOSFETs and Si IGBTs. Device characterization methods for experimentally determining switching losses and conduction losses will be presented, along with special considerations to be made when dealing with wide band-gap devices. In order to demonstrate SiC MOSFETs’ system level optimization opportunities, this thesis will present a hard-switched 5 kW DC-to-DC converter that leverages the SiC devices in question to reach a system level efficiency of 99%. This converter will also be used as a platform to perform a head-to-head comparison of Si IGBTs and SiC MOSFETs in terms of overall system efficiency.
dc.format.extent 100 p.
dc.format.medium electronic
dc.format.mimetype application/pdf
dc.language English
dc.language.iso en_US
dc.publisher University of Alabama Libraries
dc.relation.ispartof The University of Alabama Electronic Theses and Dissertations
dc.relation.ispartof The University of Alabama Libraries Digital Collections
dc.relation.hasversion born digital
dc.rights All rights reserved by the author unless otherwise indicated.
dc.subject.other Electrical engineering
dc.subject.other Computer engineering
dc.title On a future for silicon carbide in power electronics applications
dc.type thesis
dc.type text
etdms.degree.department University of Alabama. Dept. of Electrical and Computer Engineering
etdms.degree.discipline Electrical and Computer Engineering
etdms.degree.grantor The University of Alabama
etdms.degree.level master's
etdms.degree.name M.S.


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