Development of fabrication and characterization techniques for inorganic, organic and hybrid semiconductor devices

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dc.contributor Kim, Seongsin
dc.contributor Gupta, Subhadra
dc.contributor.advisor Kung, Patrick
dc.contributor.author Rivera, Elmer G.
dc.date.accessioned 2017-03-01T17:35:52Z
dc.date.available 2017-03-01T17:35:52Z
dc.date.issued 2015
dc.identifier.other u0015_0000001_0001993
dc.identifier.other Rivera_alatus_0004M_12483
dc.identifier.uri https://ir.ua.edu/handle/123456789/2398
dc.description Electronic Thesis or Dissertation
dc.description.abstract Different semiconducting types are applied in various fields of the semiconductor industry: organic, inorganic and hybrid. Each of these semiconducting types of materials have their own strengths as well as their weakness. Inorganic materials possess low absorption and high carrier mobility while organic materials possess high absorption and low carrier mobility. Inorganic/organic hybrid semiconducting devices take advantage of the mixing of these two types of semiconductors. By building a heterojunction with inorganic and organic materials, the advantages of each individual material is passes onto this new hybrid while cancelling out the disadvantages. In this master thesis, the fabrication procedure and characterization techniques are studied for inorganic, organic and hybrid semiconducting devices. For the inorganic materials, fabrication was performed in the MicroFabrication Facility in order to properly achieve small features in the micrometer range. Device processing was performed to achieve a high-electron mobility transistor using AlGaN/GaN and AlInN/GaN heterostructures. The fabrication procedure involved the defining of features through photolithography, ion mill etching, and electron-beam evaporation. Electrical characterization was performed on both heterostructures to make a comparison. The organic device studied was a photoconductor using the conducting polymer P3HT and an optical and electro-optic comparison was made with the addition of MWCNT into the polymer matrix. A hybrid pn-junction diode was fabricated using P3HT and electrical measurements were performed and analyzed through an equivalent circuit to characterize and compare it to a P3HT:MWCNT active layer for the pn-junction.
dc.format.extent 82 p.
dc.format.medium electronic
dc.format.mimetype application/pdf
dc.language English
dc.language.iso en_US
dc.publisher University of Alabama Libraries
dc.relation.ispartof The University of Alabama Electronic Theses and Dissertations
dc.relation.ispartof The University of Alabama Libraries Digital Collections
dc.relation.hasversion born digital
dc.rights All rights reserved by the author unless otherwise indicated.
dc.subject.other Engineering
dc.title Development of fabrication and characterization techniques for inorganic, organic and hybrid semiconductor devices
dc.type thesis
dc.type text
etdms.degree.department University of Alabama. Dept. of Electrical and Computer Engineering
etdms.degree.discipline Electrical and Computer Engineering
etdms.degree.grantor The University of Alabama
etdms.degree.level master's
etdms.degree.name M.S.


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